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- Title
Solution-processed NO<sub>2</sub> gas sensor based on poly(3-hexylthiophene)-doped PbS quantum dots operable at room temperature.
- Authors
Kwon, JinBeom; Ha, Yuntae; Choi, Suji; Jung, Dong Geon; An, Hee kyung; Kong, Seong Ho; Jung, Daewoong
- Abstract
The global industrial development and increase in the number of transportation vehicles, such as automobiles and ships, have led to a steady increase in the issues related to greenhouse gas emissions. NO2 is a greenhouse gas emitted in large quantities from automobiles and factories, and its emission is unavoidable in the modern world. Therefore, a sensor capable of precise detection of NO2 is required. The most commonly reported types of NO2 sensors are those based on metal oxides. However, their operation at room temperature is impossible owing to their high-temperature operating characteristics, and therefore, a heater must be designed inside or installed outside the sensor for heating. Meanwhile, NO2 sensors based on PbS quantum dots (QDs) are advantageous as they can operate at room temperature and can be easily manufactured through a solution process rather than a complicated semiconductor process. Herein, a NO2 sensor was fabricated by doping PbS QDs with poly(3-hexylthiophene) (P3HT). The as-developed sensor exhibited high responsivity to 100–0.4-ppm NO2 gas with a resolution of 200 ppb owing to the stability of the thin film and high hole mobility of P3HT.
- Subjects
QUANTUM dots; GAS detectors; GREENHOUSE gases; SEMICONDUCTOR manufacturing; HOLE mobility; AUTOMOBILE factories; THIN films
- Publication
Scientific Reports, 2024, Vol 14, Issue 1, p1
- ISSN
2045-2322
- Publication type
Article
- DOI
10.1038/s41598-024-71453-9