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- Title
Changes in Hall parameters after γ-irradiation (<sup>60</sup>Co) of n-Ge.
- Authors
Gaidar, G. P.
- Abstract
Studying the γ-irradiation influence on the properties of n-type germanium (n-Ge<As>) within the interval of concentrations of the doping arsenic impurity 7.79x1013 ≤ NAs ≡ ne ≤ 6.36x1016 cm-3 has shown that the initial resistivity of single crystals with concentrations NAs ≥5x1015 cm-3 remains constant within the accuracy of measurements carried out. Only in weakly doped crystals (with NAs ≈ 7.79x1013 cm-3 and less), the used doses of γ-irradiation cause appreciable reduction both in the carrier concentration ne and their mobility μ.
- Subjects
GAMMA rays; GERMANIUM; SINGLE crystals; DOPED semiconductors; ELECTRON mobility; ARSENIC; IMPURITY distribution in semiconductors
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, Vol 14, Issue 3, p294
- ISSN
1560-8034
- Publication type
Article