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- Title
Red emission enhancement by strong electronegativity in NaY(SiO)F:Eu phosphor for white light-emitting diodes.
- Authors
Zhang, Wenlong; Yin, Xin; Liu, Yufeng; Zhang, Na; Zhao, Guoying; Hou, Jingshan; Fang, Yongzheng
- Abstract
A red-emitting Eu doped NaY(SiO)F fluorosilicate phosphor with tetragonal structure was synthesized by conventional solid state reaction method. The crystal structure, photoluminescence properties and quenching concentration of NaY(SiO)F:Eu were investigated in detail. Excited by near-ultraviolet light at 397 nm, the dominant red emission in NaY(SiO)F:Eu phosphor is located at 615 nm, which is from the hypersensitive D-F transition of Eu ion. The optimum doping concentration of Eu ion into the host material is up to 50 %, based on which the critical transfer distance is calculated to be 7.72 Å. The large transfer distance inhibits the emission quenching. Importantly, through the comparison with NaYSiO:Eu, the intense red emission is attributed to the effect of the F ion electronegativity on the distorted local crystal environment. All the results show that NaY(SiO)F:Eu could be a potential red phosphor for near-ultraviolet white light-emitting diodes.
- Subjects
ELECTRONEGATIVITY; LIGHT emitting diodes; CRYSTAL structure; PHOSPHORS; ELECTRIC dipole transitions; PHOTOLUMINESCENCE
- Publication
Journal of Materials Science: Materials in Electronics, 2016, Vol 27, Issue 5, p5357
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-016-4435-3