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- Title
Growth of high quality CHNHPbI thin films prepared by modified dual-source vapor evaporation.
- Authors
Fan, Ping; Gu, Di; Liang, Guang-xing; Chen, Ju-long; Luo, Jing-ting; Xie, Yi-zhu; Zheng, Zhuang-hao; Zhang, Dong-ping
- Abstract
In this work, a high quality CHNHPbI thin film prepared by modified dual-source vapor evaporation was proposed. An ultra-thin PbI layer was deposited firstly, and then CHNHI and PbI were evaporated simultaneously to form CHNHPbI thin film. The results show that flat, uniform, smooth, less porous and good crystallinity perovskite thin films without impure phase are formed by the modified dual-source vapor evaporation. The ratios of Pb/I accord with the nominal MAPbI stoichiometry and the band gaps are about 1.60 eV close to the theoretical value of 1.55 eV. The properties of CHNHPbI thin film fabricated by this method are suitable for perovskite solar cells applications.
- Subjects
STOICHIOMETRY; EVAPORATION (Chemistry); GASES; THIN films; PEROVSKITE
- Publication
Journal of Materials Science: Materials in Electronics, 2016, Vol 27, Issue 3, p2321
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-015-4028-6