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- Title
Significant modification to Bi-doped BaTiO by Sm in gaseous penetration process.
- Authors
Wang, Fangwei; Hao, Sue; Li, Jialong; Wang, Jiatao; Gao, Yang; Shen, Yunfeng; Wang, Songyi
- Abstract
Gaseous penetration technique was adopted to improve the electrical conductivity of pure BiTiO powders and Bi-doped BiTiO (BBT) powders and gel precursors, which were all prepared by sol-gel method. The effects of Sm-penetration on the structure and electrical conductivity of BBT powders and gel precursors were investigated. It was observed that Sm-penetration had a very significant influence in decreasing the resistivity of the BaTiO based materials, especially for Sm-penetrated BBT gel precursors (SBBT-G) whose resistivity can reach to the lowest point of 2.15 Ωm. The dielectric properties of the BaTiO based materials has been investigated and revealed that dielectric constant of SBBT-G was negative while the dielectric loss increased to an extremely high value which was distinguished from Sm-penetrated BBT powders (SBBT-P). The temperature dependence of resistivity (R-T) of SBBT-P and SBBT-G was found to obey the Arrhenius law with activation energy calculated, respectively. These results together with the resistivity and frequency (R-F) relationship curve have shown the metallization transition of SBBT-G is obvious, which has a promising applied future. Through X-ray diffraction and Scanning electron microscope, we detected that all BaTiO based materials presented typical perovskite structure and the average grain size of SBBT-G was smaller and more uniform than that of SBBT-P.
- Subjects
BARIUM titanate; BISMUTH; DOPED semiconductors; TIN; ELECTRIC conductivity; SOL-gel processes
- Publication
Journal of Materials Science: Materials in Electronics, 2014, Vol 25, Issue 8, p3543
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-014-2054-4