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- Title
Influence of incorporation of Al ions on the structural, optical and AC impedance characteristics of spin coated ZnO thin films.
- Authors
Suganya, L.; Sundaresan, B.; Sankareswari, G.; Ravichandran, K.; Sakthivel, B.
- Abstract
Aluminium doped zinc oxide thin films were deposited onto glass substrate using spin coating technique. The effects of Al doping on structural, optical and electrical properties of these films were investigated. X-ray diffraction analysis showed that all the thin films were of polycrystalline hexagonal wurtzite structure with (002) as preferential orientation except 2 at.% of Al doped ZnO films. The optical band gap was found to be 3.25 eV for pure ZnO film. It increases up to 1.5 at.% of Al doping (3.47 eV) and then decreased slightly for the doping level of 2 at.% (3.42 eV). The reason for this widening of the optical band gap up to 1.5 at.% is well described by Burstein-Moss effect. The photoluminescence spectra of the films showed that the blue shift and red shift of violet emission were due to the change in the radiative centre between zinc vacancy and zinc interstitial. Variation in ZnO grain boundary resistance against the doping concentration was observed through AC impedance study.
- Subjects
ALUMINUM compounds; METAL ions; DOPED semiconductors; ZINC oxide thin films; X-ray diffraction; CRYSTAL structure; OPTICAL properties of metals; IMPEDANCE spectroscopy; SPIN coating
- Publication
Journal of Materials Science: Materials in Electronics, 2014, Vol 25, Issue 1, p361
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-013-1595-2