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- Title
Effect of annealing temperature on structural, optical and humidity sensing properties of indium tin oxide (ITO) thin films.
- Authors
Premkumar, M.; Vadivel, S.
- Abstract
Tin doped indium oxide (ITO) thin films were prepared by sol-gel spin coating method with In (NO)·3HO and SnCl·5HO as indium and tin sources, respectively. The as deposited samples were annealed at various temperature such as, 300, 400, 500 and 600 °C for 2 h in ambient atmosphere. The grown ITO thin films are polycrystalline in nature with cubic structure of InO with the space group La3 and the results are in good agreement with the standard JCPDS data (card no#06-0416). In addition crystalline size increases with increasing annealing temperature from 25 to 55 nm. Polycrystalline with uniform smooth surface was observed by SEM micrographs. The optical band gap energy was found to be decreased from 3.85 to 3.23 eV as the annealing temperature is increased from 300 to 600 °C. The humidity sensing performance (high sensitivity and fast response time) was significantly improved for 600 °C thin films samples, which is probably due to smaller energy band gap and physisorption between the water molecules and the surface of the thin films. The films were further characterized by PL and EDS analysis. The effect of temperature on humidity sensing mechanism of ITO thin films is also discussed.
- Subjects
TIN; INDIUM oxide; THIN films; ANNEALING of metals; SOL-gel processes
- Publication
Journal of Materials Science: Materials in Electronics, 2017, Vol 28, Issue 12, p8460
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-017-6566-6