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- Title
A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors.
- Authors
Pietrzyk, M. A.; Kowalski, B. J.; Orlowski, B. A.; Knoff, W.; Story, T.; Dobrowolski, W.; Slynko, V. E.; Slynko, E. I.; Johnson, R. L.
- Abstract
In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p→3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV.
- Subjects
EPITAXY; MANGANESE; PHOTOELECTRONS; SPECTRUM analysis; SEMICONDUCTORS; PHOTONS; CONDUCTION electrons; BINDING energy; ATOMS
- Publication
Acta Physica Polonica: A, 2010, Vol 117, Issue 2, p293
- ISSN
0587-4246
- Publication type
Article
- DOI
10.12693/APhysPolA.117.293