We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Differential Wide Temperature Range CMOS Interface Circuit for Capacitive MEMS Pressure Sensors.
- Authors
Yucai Wang; Chodavarapu, Vamsy P.
- Abstract
We describe a Complementary Metal-Oxide Semiconductor (CMOS) differential interface circuit for capacitive Micro-Electro-Mechanical Systems (MEMS) pressure sensors that is functional over a wide temperature range between -55 °C and 225 °C. The circuit is implemented using IBM 0.13 µm CMOS technology with 2.5 V power supply. A constant-gm biasing technique is used to mitigate performance degradation at high temperatures. The circuit offers the flexibility to interface with MEMS sensors with a wide range of the steady-state capacitance values from 0.5 pF to 10 pF. Simulation results show that the circuitry has excellent linearity and stability over the wide temperature range. Experimental results confirm that the temperature effects on the circuitry are small, with an overall linearity error around 2%.
- Subjects
PRESSURE sensors; CMOS integrated circuits; MICROELECTROMECHANICAL systems; TEMPERATURE effect; COMPUTER simulation
- Publication
Sensors (14248220), 2015, Vol 15, Issue 2, p4253
- ISSN
1424-8220
- Publication type
Article
- DOI
10.3390/s150204253