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Gate Work Function-Engineered Graded-Channel Macaroni MOSFET: Exploration of Temperature and Localized Trapped Charge-Induced Effects with GIDL Analysis.
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- Journal of Electronic Materials, 2022, v. 51, n. 4, p. 1512, doi. 10.1007/s11664-021-09419-0
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- Article
Performance Analysis and Investigation of Subthreshold Short-Channel Behavior of a Dual-Material Elliptical Gate-All-Around MOSFET.
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- Journal of Electronic Materials, 2019, v. 48, n. 5, p. 3270, doi. 10.1007/s11664-019-07082-0
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- Article
2-D modeling and analysis of short-channel behavior of a front high-<italic>K</italic> gate stack triple-material gate SB SON MOSFET.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 2, p. 0, doi. 10.1007/s00339-018-1567-8
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- Article
The role of brands in recruitment: mediating role of employer brand equity.
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- Asia Pacific Journal of Human Resources, 2020, v. 58, n. 2, p. 173, doi. 10.1111/1744-7941.12209
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- Article
Redefining the River Discourse—The Angry River and India’s River Woes.
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- Rupkatha Journal on Interdisciplinary Studies in Humanities, 2017, v. 9, n. 1, p. 226, doi. 10.21659/rupkatha.v9n1.23
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- Article
Characteristics and outcomes of gallbladder cancer patients at the Tata Medical Center, Kolkata 2017–2019.
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- Cancer Medicine, 2023, v. 12, n. 8, p. 9293, doi. 10.1002/cam4.5677
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- Article
A study on flare minimisation in EUV lithography by post‐layout re‐allocation of wire segments.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2021, v. 15, n. 4, p. 310, doi. 10.1049/cds2.12028
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- Article
Analytical modelling and performance analysis of gate engineered TG silicon‐on‐nothing metal–oxide–semiconductor field‐effect transistor.
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- IET Circuits, Devices & Systems (Wiley-Blackwell), 2018, v. 12, n. 5, p. 557, doi. 10.1049/iet-cds.2017.0473
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- Article