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- Title
Microwave Properties of Bi<sub>1.5</sub>Zn<sub>1.0</sub>Nb<sub>1.5</sub>O<sub>7</sub>/Ba<sub>0.6</sub>Sr<sub>0.4</sub>TiO<sub>3</sub> Hetero Layered Films Directly Sputtered on Si up to 50 GHz.
- Authors
Lihui Yang; Genshui Wang; Xianlin Dong; Ponchel, Freddy; Rémiens, Denis
- Abstract
Perovskite Ba0.6Sr0.4TiO3 ( BST), pyrochlore Bi1.5Zn1.0Nb1.5O7 ( BZN), and hetero layered BZN/BST films have been directly grown on high resistivity ( HR)- Si substrates by radio frequency magnetron sputtering. The microwave properties (up to 50 GHz) of all the films are evaluated by fabricating coplanar waveguide configuration. Experimental results showed that the BZN layer helped in tailoring the dielectric constant and reducing the loss tangent significantly. Moreover, the resulting BZN/BST/HR-Si films show moderate permittivity (~258) and tunability (~15.63%, 200 kV/cm), and low microwave loss (~0.0175) at 2 GHz and their microwave properties (1-50 GHz) potentially could be made suitable for integrated microwave tunable devices.
- Subjects
PEROVSKITE; MAGNETRON sputtering; RADIO frequency; FERROELECTRIC crystals; WAVEGUIDES; MICROWAVES
- Publication
Journal of the American Ceramic Society, 2011, Vol 94, Issue 8, p2262
- ISSN
0002-7820
- Publication type
Article
- DOI
10.1111/j.1551-2916.2011.04610.x