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- Title
Growth Behavior and Electrical Properties of a (Na<sub>0.5</sub>K<sub>0.5</sub>)NbO<sub>3</sub>Thin Film Deposited on a Pt/Ti/SiO<sub>2</sub>/Si Substrate Using RFMagnetron Sputtering.
- Authors
Lee-Seung Kang; Bo-Yun Kim; In-Tae Seo; Tae-Geun Seong; Jin-Seong Kim; Jong-Woo Sun; Dong-Soo Paik; Inrok Hwang; Bae Ho Park; Sahn Nahm
- Abstract
A crystalline (Na0.5K0.5)NbO3 (NKN) phase was formed for a film grown at 600°C, but a K5.75Nb10.85O30 (KN) second phase was also observed in this film. Formation of the KN phase was due to the evaporation of Na2O. A homogeneous NKN phase was developed in the film grown at 300°C and annealed at 800°C under a Na2O atmosphere. This film exhibited the following good electric and dielectric properties: a high dielectric constant of 237.4 with a dissipation factor of 0.93% at 100 kHz, a low leakage current density of 1.0x10-8 A/cm² at 0.1 μV/cm², and the high Pr and d33 values of 21.1 μC/cm² and 64.5 pm/V, respectively.
- Subjects
MAGNETRON sputtering; SPUTTERING (Physics); SODIUM; POTASSIUM; THIN films
- Publication
Journal of the American Ceramic Society, 2011, Vol 94, Issue 7, p1970
- ISSN
0002-7820
- Publication type
Article
- DOI
10.1111/j.1551-2916.2011.04574.x