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- Title
Epitaxial InGaAs Quantum Dots in Al<sub>0.29</sub>Ga<sub>0.71</sub>As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles.
- Authors
Kosarev, A. N.; Chaldyshev, V. V.; Kondikov, A. A.; Vartanyan, T. A.; Toropov, N. A.; Gladskikh, I. A.; Gladskikh, P. V.; Akimov, I.; Bayer, M.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.
- Abstract
Quantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal evaporation on photoluminescence of quantum dots was investigated. Photoluminescence spectra of quantum dots were obtained under stationary and pulsed excitation. The influence of silver nanoparticles exhibiting plasmon resonances on spectral distribution and kinetics of luminescence of the epitaxial quantum dots was studied.
- Subjects
QUANTUM dots; SILVER nanoparticles; QUANTUM dots spectra; INDIUM gallium arsenide; NEAR-fields; MOLECULAR beam epitaxy
- Publication
Optics & Spectroscopy, 2019, Vol 126, Issue 5, p492
- ISSN
0030-400X
- Publication type
Article
- DOI
10.1134/S0030400X19050151