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- Title
Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route.
- Authors
Lee, Hyunjae; Ha, Seunghyun; Bae, Jin-Hyuk; Kang, In-Man; Kim, Kwangeun; Lee, Won-Yong; Jang, Jaewon
- Abstract
The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO2 films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO2 TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm2/Vs, 0.87 V/decade, and 107, respectively.
- Subjects
THIN film transistors; ANNEALING of metals; PRESSURE swing adsorption process; CARRIER density
- Publication
Electronics (2079-9292), 2019, Vol 8, Issue 9, p955
- ISSN
2079-9292
- Publication type
Article
- DOI
10.3390/electronics8090955