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- Title
Anomalous Photoresponse of Heavily Doped GaAs/AlAs Superlattices with Electric Domains.
- Authors
Altukhov, I. V.; Dizhur, S. E.; Kagan, M. S.; Khvalkovskiy, N. A.; Paprotskiy, S. K.; Vasil'evskii, I. S.; Vinichenko, A. N.
- Abstract
The strong effect of weak interband illumination on tunneling transport in doped GaAs/AlAs superlattices was found under conditions of electric domain formation. The photoresponse at voltages below the threshold one (before the domain formation) did not observe. The phenomenon is referred to strong carrier depletion inside the triangular high-field domain. The domain modes transformations under the illumination were also found.
- Subjects
AUDITING standards; GALLIUM arsenide; THRESHOLD voltage; SUPERLATTICES; TUNNEL design &; construction
- Publication
Journal of Communications Technology & Electronics, 2021, Vol 66, Issue 12, p1385
- ISSN
1064-2269
- Publication type
Article
- DOI
10.1134/S1064226921440017