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Colour-crafted phosphor-free white light emitters via in-situ nanostructure engineering.
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- Scientific Reports, 2017, p. 44148, doi. 10.1038/srep44148
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- Article
Phosphor-free white-light emitters using in-situ GaN nanostructures grown by metal organic chemical vapor deposition.
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- Scientific Reports, 2015, v. 5, n. 1, p. 17372, doi. 10.1038/srep17372
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- Article
Growth mechanism of InGaN nanodots on three-dimensional GaN structures.
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- Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 7, p. n/a, doi. 10.1002/pssr.201700042
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- Article
Size‐Dependent Characteristics of InGaN‐Based Blue and Green Micro‐Light‐Emitting Diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202300642
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- Article
Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370033
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- Article
Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202370033
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- Article
Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 6, p. 1, doi. 10.1002/pssa.202200680
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- Article
Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 12, p. 1, doi. 10.1002/pssa.201900973
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- Article
Comparison of MoS<sub>2</sub>/p‐GaN Heterostructures Fabricated via Direct Chemical Vapor Deposition and Transfer Method.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900722
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- Article
Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900695
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- Article
The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900694
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- Article
Efficiency Improvement of Deep‐Ultraviolet Light Emitting Diodes with Gradient Electron Blocking Layers.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 10, p. 1, doi. 10.1002/pssa.201700677
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- Article
Effect of defects on the luminescence in semipolar InGaN/GaN quantum wells on planar and patterned m-plane sapphire substrate.
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- Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 8, p. 1526, doi. 10.1002/pssa.201127653
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- Article
Microstructural Gradational Properties of Sn-Doped Gallium Oxide Heteroepitaxial Layers Grown Using Mist Chemical Vapor Deposition.
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- Materials (1996-1944), 2022, v. 15, n. 3, p. 1050, doi. 10.3390/ma15031050
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- Article
Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar 11 2 ¯ 2 InGaN/GaN Multi-Quantum Wells.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 13, p. 1946, doi. 10.3390/nano13131946
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- Article