We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Synthesis and resistive switching behaviour of ZnMnO thin films with an Ag/ZnMnO/ITO unsymmetrical structure.
- Authors
WANG, HUA; GAO, SHU-MING; XU, JI-WEN; YUAN, CHANG-LAI; ZHANG, XIAO-WEN
- Abstract
Single-phase MnZnO films were prepared on glass substrates coated with the use of indium tin oxide (ITO) as transparent bottom electrode via the sol-gel method. The effects of annealing temperature on structure, resistance switching behaviour and endurance characteristics of the ZnMnO films were investigated. The stable resistive switching behaviour with high resistance ratio in Ag/ZnMnO/ITO unsymmetrical structure was observed. No second phase is detected, and the crystallinity of the MnZnO films is improved with the increase in annealing temperature from 350 to 400C. The MnZnO films annealed at 350-450C with an Ag/MnZnO/ITO structure exhibit bipolar resistive switching behaviour. Ohmic and space-charge-limited conductions are the dominant mechanisms at low and high resistance states, respectively. V, V and R/R of the MnZnO films increase with the increase in annealing temperature. Improved endurance characteristics are observed in the samples annealed at 350 and 400C. The endurance of the MnZnO films degrades when annealed at >450C.
- Subjects
SWITCHING circuits; THIN films; INDIUM tin oxide; ZINC compounds; CHEMICAL synthesis; ELECTRICAL resistivity
- Publication
Bulletin of Materials Science, 2015, Vol 38, Issue 1, p105
- ISSN
0250-4707
- Publication type
Article
- DOI
10.1007/s12034-014-0792-9