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- Title
The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply.
- Authors
Urchuk, S. U.; Krasnov, A. A.; Legotin, S. A.; Didenko, S. I.; Murashev, V. N.; Omel'chenko, U. C.; Osipov, U. V.; Rabinovich, O. I.; Popkova, A. V.
- Abstract
In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It has been observed that the concentration of the lightly doped region more significantly influence on the current-voltage characteristics than the depth of the p-n-junction. The concentration of the n-region, equal to 1014 cm -3, can be considered as during betavoltaic power supply design. It is shown that, by increasing the power supply activity the conversion efficiency of the structure increases, too.
- Subjects
CURRENT-voltage characteristics; COMPUTER simulation; ELECTRIC power; DOPING agents (Chemistry); CRYSTAL structure
- Publication
Journal of Nano- & Electronic Physics, 2015, Vol 7, Issue 4, p04005-1
- ISSN
2077-6772
- Publication type
Article