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- Title
Perovskite-Based Photodetectors in the Lateral Device Geometry.
- Authors
Dias, Sandra; Ganesh, N.
- Abstract
We report the fabrication and demonstration of perovskite-based photodetector-response in the lateral device geometry. Two different types of detectors were fabricated and compared to study the effects of the lateral and radial electric field on device response. The first type of device consisted of a 2D (BA2MAn−1PbnBr3n+1)/3D (CsPbBr3) perovskite heterojunction and the second consisted of MoS2/CsPbBr3 in the active layer. High-quality perovskite films were deposited by thermal evaporation and the presence of distinct phases was confirmed by x-ray diffraction and PL studies. Additionally, MoS2 thin films were grown by pulsed laser deposition with Raman measurements showing the presence of a few layers of MoS2. The photoresponse of the 2D/3D perovskite halide device was measured under monochromatic illumination in the UV–Visible region. These 2D/3D based devices exhibit a responsivity, external quantum efficiency and linear dynamic range of 1.02 A/W, 276.6% and 77 dB, respectively, at 1-V operational bias. The photoresponse of the MoS2/CsPbBr3 devices were measured under 385 nm illumination and the responsivity, sensitivity, external quantum efficiency and specific detectivity at 10 V bias were found to be 0.4 mA/W, 1.2, 0.13% and 3.5 × 109 Jones, respectively.
- Subjects
PULSED laser deposition; PHOTODETECTORS; SOLAR cells; QUANTUM efficiency; ELECTRIC fields; RAMAN lasers; THIN films
- Publication
Journal of Electronic Materials, 2021, Vol 50, Issue 12, p7214
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-021-09275-y