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Light-scattering gating and characterization of plasma microparticles.
Published in:
Journal of Biomedical Optics, 2016, v. 21, n. 11, p. 1, doi. 10.1117/1.JBO.21.11.115003
By:
- Konokhova, Anastasiya I.;
- Chernova, Darya N.;
- Strokotov, Dmitry I.;
- Karpenko, Andrei A.;
- Chernyshev, Andrei V.;
- Maltsev, Valeri P.;
- Yurkin, Maxim A.
Publication type:
Article
Additivity of light-scattering patterns of aggregated biological particles.
Published in:
Journal of Biomedical Optics, 2014, v. 19, n. 8, p. 1, doi. 10.1117/1.JBO.19.8.085004
By:
- Moskalensky, Alexander E.;
- Strokotov, Dmitry I.;
- Chernyshev, Andrei V.;
- Maltsev, Valeri P.;
- Yurkin, Maxim A.
Publication type:
Article
Is there a difference between T- and B-lymphocyte morphology?
Published in:
Journal of Biomedical Optics, 2009, v. 14, n. 6, p. 064036, doi. 10.1117/1.3275471
By:
- Dmitry I. Strokotov;
- Maxim A. Yurkin;
- Konstantin V. Gilev;
- Dirk R. van Bockstaele;
- Alfons G. Hoekstra;
- Nikolay B. Rubtsov;
- Valeri P. Maltsev
Publication type:
Article
Light scattering by neutrophils: model, simulation, and experiment.
Published in:
Journal of Biomedical Optics, 2008, v. 13, n. 5, p. 54057, doi. 10.1117/1.2992140
By:
- Darya Yu. Orlova;
- Maxim A. Yurkin;
- Alfons G. Hoekstra;
- Valeri P. Maltsev
Publication type:
Article
Far-infrared photodetection in graphene nanoribbon heterostructures with black-phosphorus base layers.
Published in:
Optical Engineering, 2021, v. 60, n. 8, p. 82002, doi. 10.1117/1.OE.60.8.082002
By:
- Ryzhii, Maxim;
- Ryzhii, Victor;
- Maltsev, Petr P.;
- Ponomarev, Dmitry S.;
- Leiman, Vladimir G.;
- Karasik, Valery E.;
- Mitin, Vladimir;
- Shur, Michael S.;
- Otsuji, Taiichi
Publication type:
Article
Features of modern secondary school teacher's value-based attitude to health and emotional burnout.
Published in:
Revista Espacios, 2019, v. 40, n. 29, p. 1
By:
- MALTSEV, Viktor P.;
- BELOUSOVA, Natalya A.;
- TITARENKO, Natalya N.
Publication type:
Article
On the identification of plasma sheet flapping waves observed by Cluster.
Published in:
Geophysical Research Letters, 2005, v. 32, n. 2, p. n/a, doi. 10.1029/2004GL021552
By:
- Golovchanskaya, I. V.;
- Maltsev, Y. P.
Publication type:
Article
Comment on 'Braking of high-speed flows in the near-Earth tail' by K. Shiokawa, W. Baumjohann, and G. Haerendel.
Published in:
Geophysical Research Letters, 1998, v. 25, n. 18, p. 3501, doi. 10.1029/98GL02629
By:
- Maltsev, Yu. P.
Publication type:
Article
Direct-driven mechanism for geomagnetic storms.
Published in:
Geophysical Research Letters, 1996, v. 23, n. 13, p. 1689, doi. 10.1029/96GL01025
By:
- Arykov, A. A;
- Maltsev, Yu. P.
Publication type:
Article
Analysis of Sub-Micron Spherical Particles using Scanning Flow Cytometry.
Published in:
Particle & Particle Systems Characterization, 2000, v. 17, n. 5/6, p. 225, doi. 10.1002/1521-4117(200012)17:5/6<225::AID-PPSC225>3.0.CO;2-8
By:
- Sem'yanov, Konstantin;
- Maltsev, Valeri P
Publication type:
Article
Ionic Conductivity of Lithium Phosphides.
Published in:
Crystals (2073-4352), 2023, v. 13, n. 5, p. 756, doi. 10.3390/cryst13050756
By:
- Maltsev, Alexey P.;
- Chepkasov, Ilya V.;
- Kvashnin, Alexander G.;
- Oganov, Artem R.
Publication type:
Article
Ultraviolet light scattering scanning flow cytometry in the characterization of submicron microparticles.
Published in:
Cytometry. Part A, 2023, v. 103, n. 9, p. 736, doi. 10.1002/cyto.a.24769
By:
- Strokotov, Dmitry I.;
- Nekrasov, Vyacheslav M.;
- Gilev, Konstantin V.;
- Karpenko, Andrey A.;
- Maltsev, Valeri P.
Publication type:
Article
A light scatter based model relating erythrocyte vesiculation to lifetime in circulation.
Published in:
Cytometry. Part A, 2023, v. 103, n. 9, p. 712, doi. 10.1002/cyto.a.24765
By:
- Yastrebova, Ekaterina S.;
- Gisich, Alla V.;
- Nekrasov, Vyacheslav M.;
- Gilev, Konstantin V.;
- Strokotov, Dmitry I.;
- Chernyshev, Andrei V.;
- Karpenko, Andrey A.;
- Maltsev, Valeri P.
Publication type:
Article
Erythrocyte lysis and angle‐resolved light scattering measured by scanning flow cytometry result to 48 indices quantifying a gas exchange function of the human organism.
Published in:
Cytometry. Part A, 2023, v. 103, n. 1, p. 39, doi. 10.1002/cyto.a.24554
By:
- Yastrebova, Ekaterina S.;
- Nekrasov, Vyacheslav M.;
- Gilev, Konstantin V.;
- Gisich, Alla V.;
- Abubakirova, Olga A.;
- Strokotov, Dmitry I.;
- Chernyshev, Andrey V.;
- Karpenko, Andrey A.;
- Maltsev, Valeri P.
Publication type:
Article
Proposed Dynamics of CDB3 Activation in Human Erythrocytes by Nifedipine Studied with Scanning Flow Cytometry.
Published in:
Cytometry. Part A, 2019, v. 95, n. 12, p. 1275, doi. 10.1002/cyto.a.23918
By:
- Yastrebova, Ekaterina S.;
- Konokhova, Anastasiya I.;
- Strokotov, Dmitry I.;
- Karpenko, Andrei A.;
- Maltsev, Valeri P.;
- Chernyshev, Andrei V.
Publication type:
Article
Calibration‐free quantitative immunoassay by flow cytometry: Theoretical consideration and practical implementation for IgG antibody binding to CD14 receptors on human leukocytes.
Published in:
Cytometry. Part A, 2018, v. 93, n. 7, p. 695, doi. 10.1002/cyto.a.23494
By:
- Khalo, Irina V.;
- Kozyreva, Viktoriya S.;
- Vakhrushev, Roman V.;
- Patlai, Daria S.;
- Shilova, Anna N.;
- Karpenko, Andrei A.;
- Yurkin, Maxim A.;
- Moskalensky, Alexander E.;
- Strokotov, Dmitry I.;
- Maltsev, Valeri P.;
- Chernyshev, Andrei V.
Publication type:
Article
Super-resolved calibration-free flow cytometric characterization of platelets and cell-derived microparticles in platelet-rich plasma.
Published in:
Cytometry. Part A, 2016, v. 89, n. 2, p. 159, doi. 10.1002/cyto.a.22621
By:
- Konokhova, Anastasiya I.;
- Chernova, Darya N.;
- Moskalensky, Alexander E.;
- Strokotov, Dmitry I.;
- Yurkin, Maxim A.;
- Chernyshev, Andrei V.;
- Maltsev, Valeri P.
Publication type:
Article
High-precision characterization of individual E. coli cell morphology by scanning flow cytometry.
Published in:
Cytometry. Part A, 2013, v. 83A, n. 6, p. 568, doi. 10.1002/cyto.a.22294
By:
- Konokhova, Anastasiya I.;
- Gelash, Andrey A.;
- Yurkin, Maxim A.;
- Chernyshev, Andrey V.;
- Maltsev, Valeri P.
Publication type:
Article
Polarized light-scattering profile-advanced characterization of nonspherical particles with scanning flow cytometry.
Published in:
Cytometry. Part A, 2011, v. 79A, n. 7, p. 570, doi. 10.1002/cyto.a.21074
By:
- Strokotov, Dmitry I.;
- Moskalensky, Alexander E.;
- Nekrasov, Vyacheslav M.;
- Maltsev, Valeri P.
Publication type:
Article
OPTIMIZATION METHODS FOR CHARACTERIZATION OF SINGLE PARTICLES FROM LIGHT SCATTERING PATTERNS.
Published in:
AAPP Physical, Mathematical & Natural Sciences / Atti della Accademia Peloritana dei Pericolanti: Classe di Scienze Fisiche, Matematiche e Naturali, 2011, v. 89, n. S1, p. 096-1, doi. 10.1478/C1V89S1P096
By:
- Yurkin, Maxim A.;
- Dyatlov, Gleb V.;
- Gilev, Konstantin V.;
- Maltsev, Valeri P.
Publication type:
Article
Photoluminescence Studies of Si-Doped Epitaxial GaAs Films Grown on (100)- and (111)A-Oriented GaAs Substrates at Lowered Temperatures.
Published in:
Semiconductors, 2018, v. 52, n. 3, p. 376, doi. 10.1134/S1063782618030119
By:
- Galiev, G. B.;
- Klimov, E. A.;
- Klochkov, A. N.;
- Pushkarev, S. S.;
- Maltsev, P. P.
Publication type:
Article
Electrical and thermal properties of photoconductive antennas based on InGaAs ( x > 0.3) with a metamorphic buffer layer for the generation of terahertz radiation.
Published in:
Semiconductors, 2017, v. 51, n. 9, p. 1218, doi. 10.1134/S1063782617090160
By:
- Ponomarev, D.;
- Khabibullin, R.;
- Yachmenev, A.;
- Pavlov, A.;
- Slapovskiy, D.;
- Glinskiy, I.;
- Lavrukhin, D.;
- Ruban, O.;
- Maltsev, P.
Publication type:
Article
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates.
Published in:
Semiconductors, 2017, v. 51, n. 6, p. 760, doi. 10.1134/S1063782617060100
By:
- Galiev, G.;
- Klochkov, A.;
- Vasil'evskii, I.;
- Klimov, E.;
- Pushkarev, S.;
- Vinichenko, A.;
- Khabibullin, R.;
- Maltsev, P.
Publication type:
Article
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates.
Published in:
Semiconductors, 2017, v. 51, n. 4, p. 503, doi. 10.1134/S1063782617040054
By:
- Galiev, G.;
- Pushkarev, S.;
- Buriakov, A.;
- Bilyk, V.;
- Mishina, E.;
- Klimov, E.;
- Vasil'evskii, I.;
- Maltsev, P.
Publication type:
Article
Terahertz radiation in InGaAs grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation.
Published in:
Semiconductors, 2017, v. 51, n. 4, p. 509, doi. 10.1134/S1063782617040170
By:
- Ponomarev, D.;
- Khabibullin, R.;
- Yachmenev, A.;
- Maltsev, P.;
- Grekhov, M.;
- Ilyakov, I.;
- Shishkin, B.;
- Akhmedzhanov, R.
Publication type:
Article
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme.
Published in:
Semiconductors, 2017, v. 51, n. 4, p. 514, doi. 10.1134/S106378261704008X
By:
- Khabibullin, R.;
- Shchavruk, N.;
- Klochkov, A.;
- Glinskiy, I.;
- Zenchenko, N.;
- Ponomarev, D.;
- Maltsev, P.;
- Zaycev, A.;
- Zubov, F.;
- Zhukov, A.;
- Cirlin, G.;
- Alferov, Zh.
Publication type:
Article
Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates.
Published in:
Semiconductors, 2017, v. 51, n. 3, p. 310, doi. 10.1134/S1063782617030071
By:
- Galiev, G.;
- Grekhov, M.;
- Kitaeva, G.;
- Klimov, E.;
- Klochkov, A.;
- Kolentsova, O.;
- Kornienko, V.;
- Kuznetsov, K.;
- Maltsev, P.;
- Pushkarev, S.
Publication type:
Article
Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures.
Published in:
Semiconductors, 2016, v. 50, n. 10, p. 1377, doi. 10.1134/S1063782616100134
By:
- Khabibullin, R.;
- Shchavruk, N.;
- Pavlov, A.;
- Ponomarev, D.;
- Tomosh, K.;
- Galiev, R.;
- Maltsev, P.;
- Zhukov, A.;
- Cirlin, G.;
- Zubov, F.;
- Alferov, Zh.
Publication type:
Article
Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ SiN passivation.
Published in:
Semiconductors, 2016, v. 50, n. 10, p. 1416, doi. 10.1134/S1063782616100225
By:
- Tomosh, K.;
- Pavlov, A.;
- Pavlov, V.;
- Khabibullin, R.;
- Arutyunyan, S.;
- Maltsev, P.
Publication type:
Article
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates.
Published in:
Semiconductors, 2016, v. 50, n. 2, p. 185, doi. 10.1134/S1063782616020123
By:
- Khabibullin, R.;
- Yachmenev, A.;
- Lavrukhin, D.;
- Ponomarev, D.;
- Bugayev, A.;
- Maltsev, P.
Publication type:
Article
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates.
Published in:
Semiconductors, 2016, v. 50, n. 2, p. 195, doi. 10.1134/S1063782616020081
By:
- Galiev, G.;
- Klimov, E.;
- Grekhov, M.;
- Pushkarev, S.;
- Lavrukhin, D.;
- Maltsev, P.
Publication type:
Article
Laser-assisted simulation of transient radiation effects in heterostructure components based on AB semiconductor compounds.
Published in:
Semiconductors, 2016, v. 50, n. 2, p. 222, doi. 10.1134/S1063782616020093
By:
- Gromov, D.;
- Maltsev, P.;
- Polevich, S.
Publication type:
Article
Photoluminescence properties of modulation-doped InAlAs/InGaAs/InAlAs structures with strained inas and gaas nanoinserts in the quantum well.
Published in:
Semiconductors, 2015, v. 49, n. 9, p. 1207, doi. 10.1134/S1063782615090122
By:
- Galiev, G.;
- Vasil'evskii, I.;
- Klimov, E.;
- Klochkov, A.;
- Lavruhin, D.;
- Pushkarev, S.;
- Maltsev, P.
Publication type:
Article
Photoluminescence of heterostructures containing an InGaAs quantum well with a high in content at different excitation powers.
Published in:
Semiconductors, 2015, v. 49, n. 9, p. 1218, doi. 10.1134/S1063782615090183
By:
- Lavrukhin, D.;
- Khabibullin, R.;
- Ponomarev, D.;
- Maltsev, P.
Publication type:
Article
Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures.
Published in:
Semiconductors, 2015, v. 49, n. 7, p. 911, doi. 10.1134/S1063782615070179
By:
- Lavrukhin, D.;
- Yachmenev, A.;
- Bugaev, A.;
- Galiev, G.;
- Klimov, E.;
- Khabibullin, R.;
- Ponomarev, D.;
- Maltsev, P.
Publication type:
Article
Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic InAlAs/InGaAs/InAlAs structures on GaAs substrates.
Published in:
Semiconductors, 2015, v. 49, n. 7, p. 921, doi. 10.1134/S1063782615070131
By:
- Kulbachinskii, V.;
- Oveshnikov, L.;
- Lunin, R.;
- Yuzeeva, N.;
- Galiev, G.;
- Klimov, E.;
- Pushkarev, S.;
- Maltsev, P.
Publication type:
Article
Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an InGaAs quantum well with InAs inserts.
Published in:
Semiconductors, 2015, v. 49, n. 2, p. 199, doi. 10.1134/S1063782615020165
By:
- Kulbachinskii, V.;
- Oveshnikov, L.;
- Lunin, R.;
- Yuzeeva, N.;
- Galiev, G.;
- Klimov, E.;
- Maltsev, P.
Publication type:
Article
Specific features of the photoluminescence of HEMT nanoheterostructures containing a composite InAlAs/InGaAs/InAs/InGaAs/InAlAs quantum well.
Published in:
Semiconductors, 2015, v. 49, n. 2, p. 234, doi. 10.1134/S1063782615020086
By:
- Galiev, G.;
- Vasil'evskii, I.;
- Klimov, E.;
- Klochkov, A.;
- Lavruhin, D.;
- Pushkarev, S.;
- Maltsev, P.
Publication type:
Article
Application of photoluminescence spectroscopy to studies of InAlAs/InGaAs/GaAs metamorphic nanoheterostructures.
Published in:
Semiconductors, 2014, v. 48, n. 7, p. 883, doi. 10.1134/S1063782614070070
By:
- Galiev, G.;
- Vasil'evskii, I.;
- Klimov, E.;
- Klochkov, A.;
- Lavruhin, D.;
- Pushkarev, S.;
- Maltsev, P.
Publication type:
Article
Photoluminescence studies of InAlAs/InGaAs/InAlAs metamorphic heterostructures on GaAs substrates.
Published in:
Semiconductors, 2014, v. 48, n. 5, p. 640, doi. 10.1134/S1063782614050078
By:
- Galiev, G.;
- Klimov, E.;
- Klochkov, A.;
- Lavruhin, D.;
- Pushkarev, S.;
- Maltsev, P.
Publication type:
Article
MHEMT with a power-gain cut-off frequency of f = 0.63 THz on the basis of a InAlAs/InGaAs/InAlAs/GaAs nanoheterostructure.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 69, doi. 10.1134/S1063782614010187
By:
- Lavrukhin, D.;
- Yachmenev, A.;
- Galiev, R.;
- Khabibullin, R.;
- Ponomarev, D.;
- Fedorov, Yu.;
- Maltsev, P.
Publication type:
Article
Effect of GaAs (100) substrate misorientation on the electrical parameters and surface morphology of metamorphic InAlAs/InGaAs/InAlAs HEMT nanoheterostructures.
Published in:
Semiconductors, 2014, v. 48, n. 1, p. 63, doi. 10.1134/S1063782614010138
By:
- Galiev, G.;
- Pushkarev, S.;
- Vasil'evskii, I.;
- Klimov, E.;
- Klochkov, A.;
- Maltsev, P.
Publication type:
Article
Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths.
Published in:
Semiconductors, 2013, v. 47, n. 9, p. 1203, doi. 10.1134/S106378261309008X
By:
- Khabibullin, R. A.;
- Galiev, G. B.;
- Klimov, E. A.;
- Ponomarev, D. S.;
- Vasil’evskii, I. S.;
- Kulbachinskii, V. A.;
- Bokov, P. Yu.;
- Avakyants, L. P.;
- Chervyakov, A. V.;
- Maltsev, P. P.
Publication type:
Article
Chylomicrons against light scattering: The battle for characterization.
Published in:
Journal of Biophotonics, 2018, v. 11, n. 10, p. N.PAG, doi. 10.1002/jbio.201700381
By:
- Chernova, Darya N.;
- Konokhova, Anastasiya I.;
- Novikova, Olga A.;
- Yurkin, Maxim A.;
- Strokotov, Dmitry I.;
- Karpenko, Andrei A.;
- Chernyshev, Andrei V.;
- Maltsev, Valeri P.
Publication type:
Article
New Structure for Photoconductive Antennas Based on {LTG-GaAs/GaAs:Si} Superlattice on GaAs(111)A Substrate.
Published in:
Crystallography Reports, 2019, v. 64, n. 2, p. 205, doi. 10.1134/S1063774519020111
By:
- Galiev, G. B.;
- Trunkin, I. N.;
- Vasiliev, A. L.;
- Vasil'evskii, I. S.;
- Vinichenko, A. N.;
- Klimov, E. A.;
- Klochkov, A. N.;
- Maltsev, P. P.;
- Pushkarev, S. S.
Publication type:
Article
Epitaxial low-temperature growth of InGaAs films on GaAs(100) and GaAs(111) A substrates using a metamorphic buffer.
Published in:
Crystallography Reports, 2017, v. 62, n. 6, p. 947, doi. 10.1134/S1063774517060104
By:
- Galiev, G.;
- Trunkin, I.;
- Klimov, E.;
- Klochkov, A.;
- Vasiliev, A.;
- Imamov, R.;
- Pushkarev, S.;
- Maltsev, P.
Publication type:
Article
Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411) A substrates.
Published in:
Crystallography Reports, 2017, v. 62, n. 4, p. 589, doi. 10.1134/S1063774517030063
By:
- Galiev, G.;
- Klimova, E.;
- Pushkarev, S.;
- Klochkov, A.;
- Trunkin, I.;
- Vasiliev, A.;
- Maltsev, P.
Publication type:
Article
Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111) A substrates.
Published in:
Crystallography Reports, 2017, v. 62, n. 1, p. 82, doi. 10.1134/S1063774517010072
By:
- Galiev, G.;
- Klimov, E.;
- Vasiliev, A.;
- Imamov, R.;
- Pushkarev, S.;
- Trunkin, I.;
- Maltsev, P.
Publication type:
Article
Structural and electrophysical properties of InAlAs/InGaAs/InAlAs/InP HEMT nanoheterostructures with different combinations of InAs and GaAs inserts in quantum well.
Published in:
Crystallography Reports, 2015, v. 60, n. 3, p. 397, doi. 10.1134/S1063774515030062
By:
- Galiev, G.;
- Vasiliev, A.;
- Vasil'evskii, I.;
- Imamov, R.;
- Klimov, E.;
- Klochkov, A.;
- Lavruhin, D.;
- Maltsev, P.;
- Pushkarev, S.;
- Trunkin, I.
Publication type:
Article
Erratum to: 'Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well'.
Published in:
2015
By:
- Galiev, G.;
- Vasiliev, A.;
- Imamov, R.;
- Klimov, E.;
- Maltsev, P.;
- Pushkarev, S.;
- Presniakov, M.;
- Trunkin, I.
Publication type:
Erratum

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