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- Title
Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature.
- Authors
Qaisi, Ramy M.; Smith, Casey E.; Hussain, Muhammad M.
- Abstract
We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high- κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
- Subjects
CHEMICAL vapor deposition; ATMOSPHERIC pressure; GRAPHENE; TRANSISTORS; HIGH temperatures; ALUMINUM oxide
- Publication
Physica Status Solidi - Rapid Research Letters, 2014, Vol 8, Issue 7, p621
- ISSN
1862-6254
- Publication type
Article
- DOI
10.1002/pssr.201409100