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- Title
Characterization analysis of 355 nm pulsed laser cutting of 6H-SiC.
- Authors
Tseng, Shih-Feng; Luo, Cheng-Xing; Hsiao, Wen-Tse
- Abstract
In this study, a 355-nm pulsed laser was used to cut 350-μm-thick silicon carbide wafers. The surface morphology and changes in the elemental composition and structure of the cutting line after processing were analyzed using lasers with various laser power, pulse repetition frequency, scanning speed, and scanning repetition settings; they were also compared with those observed for a test piece made using a diamond wheel. An average laser power of 6 W, pulse repetition frequency of 60 kHz, and scanning speed of 5 mm/s minimized oxidation and achieved a groove width of 18.6 μm—15.1 μm narrower than the diamond-cut groove. X-ray photoelectron spectroscopy revealed that the heat-affected zone and the oxygen content of the surface recast layer increased when the laser energy and number of repetitions increased or when the scanning speed decreased. Oxygen content increased from 15.93% (diamond cutting) to up to 47.81%.
- Publication
International Journal of Advanced Manufacturing Technology, 2024, Vol 130, Issue 5/6, p3133
- ISSN
0268-3768
- Publication type
Article
- DOI
10.1007/s00170-023-12802-2