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- Title
Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy.
- Authors
Timoshnev, S. N.; Mizerov, A. M.; Sobolev, M. S.; Nikitina, E. V.
- Abstract
The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasmaassisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in situ control of the GaN/Si(111) nanocolumns lateral size is proposed.
- Subjects
GALLIUM nitride; MOLECULAR beam epitaxy; NUCLEATION; THERMAL expansion; HETEROSTRUCTURES
- Publication
Semiconductors, 2018, Vol 52, Issue 5, p660
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782618050342