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- Title
A model for non-thermal action of microwave radiation on oxide film/semiconductor structures.
- Authors
Okhrimenko, O. B.
- Abstract
A model is considered that explains mechanism of non-thermal action of microwave radiation on the thin SiO2 (TiO2, Er2O3, Gd2O3) film/SiC and SiO2/GaAs structures. It assumes that the centers of electron-hole recombination are redistributed because of resonance interaction between dislocations of certain length and microwave radiation. As a result, additional bands appear in photoluminescence (PL) spectra of the oxide film/SiC structures or intensities of some bands are redistributed in the PL spectra of the SiO2/GaAs structure, as well as optical density of the oxide film/SiC structures changes.
- Subjects
OXIDE coating; MICROWAVE chemistry; GALLIUM arsenide; SILICA; PHOTOLUMINESCENCE; OPTICAL properties of semiconductors; SEMICONDUCTOR films
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, Vol 17, Issue 3, p227
- ISSN
1560-8034
- Publication type
Article