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- Title
Angular Dependence of Si<sub>3</sub>N<sub>4</sub> Etching in C<sub>4</sub>F<sub>6</sub>/CH<sub>2</sub>F<sub>2</sub>/O<sub>2</sub>/Ar Plasmas.
- Authors
Kim, Jun-Hyun; Cho, Sung-Woon; Kim, Chang-Koo
- Abstract
The dependence of Si3N4 etching on ion-incident angles is investigated at various CH2F2 flow rates in C4F6/CH2F2/O2/Ar plasmas. The normalized etch yield (NEY) curves for Si3N4 imply that physical sputtering is a major contributor to Si3N4 etching. An increase in the amount of CH2F2 in the plasma produces thicker and more etch-resistant fluorocarbon films. Systematic analyses on deposition and etching of the passively deposited fluorocarbon films on Si3N4 in a C4F6/CH2F2/O2/Ar plasma show that the normalized deposition rate of the fluorocarbon film is nearly the same and unaffected by the CH2F2 flow rate while etching of fluorocarbon films is similar to etching of Si3N4, thus, etching of the fluorocarbon film, rather than its deposition, limits Si3N4 etching in C4F6/CH2F2/O2/Ar plasmas.
- Subjects
FLUOROCARBONS; SPUTTERING (Physics); SILICON nitride; PLASMA deposition; ETCHING of silicon nitride
- Publication
Chemical Engineering & Technology, 2017, Vol 40, Issue 12, p2251
- ISSN
0930-7516
- Publication type
Article
- DOI
10.1002/ceat.201700126