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- Title
Size-controlled Si quantum dots embedded in B-doped SiN/SiN superlatice for Si quantum dot solar cells.
- Authors
Chen, Xiaobo; Yang, Wen; Yang, Peizhi; Yuan, Junbao; Zhao, Fei; Hao, Jiabo; Tang, Yu
- Abstract
Under the condition of the fixed SiN layer thickness of 1.1 nm, Si-QDs embedded in B-doped SiN/SiN multilayer thin films with various SiN layer thickness were fabricated respectively. Si-QDs with controllable and nearly uniform size were formed in SiN layers, and found that the optical band gap of the films can be adjusted by changing the thickness of SiN layer. On the basis of this, the Si-QDs/c-Si heterojunction solar cells were prepared. It is found that the larger the band gap is, the higher the cell efficiency is. The best performance device is obtained with average QD size of ~3.5 nm, which has the highest efficiency of 7.05 % compared with the other two devices. This difference is caused by the difference of the spectral response of these devices.
- Subjects
QUANTUM dots; SOLAR cells; THIN films; HETEROJUNCTIONS; SPECTRAL sensitivity
- Publication
Journal of Materials Science: Materials in Electronics, 2017, Vol 28, Issue 2, p1322
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-016-5663-2