We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Fabrication of Cu(In,Ga)Se thin films by ion beam sputtering deposition from a quaternary target at different substrate temperatures.
- Authors
Fan, Ping; Chi, Jing-rong; Liang, Guang-xing; Cai, Xing-min; Zhang, Dong-ping; Zheng, Zhuang-hao; Cao, Peng-ju; Chen, Tiao-bao
- Abstract
Cu(In, Ga)Se (CIGS) thin films were fabricated by ion beam sputtering deposition from a single quaternary target at different substrate temperatures ( T). The thin films were characterized with X-ray diffractometry, scanning electron microscopy, energy-dispersive X-ray spectroscopy and four-point probe technique to study the microstructures, surface morphology, composition and electrical properties, respectively. The results show that the films grown above 400 °C are of chalcopyrite structure. Cu(InGa)Se thin film was obtained when T is 550 °C. The Cu and Se atomic percentage when T is above 500 °C is higher than when T is below 500 °C. With the increase in T, the surfaces morphology of the films is denser and the resistivity of the films decreases.
- Subjects
ELECTRIC properties of thin films; ION bombardment; X-ray diffractometers; SCANNING electron microscopy; X-ray spectroscopy
- Publication
Journal of Materials Science: Materials in Electronics, 2012, Vol 23, Issue 11, p1957
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-012-0687-8