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- Title
On the Current-Voltage Characteristic of an Ideal Metal-Semiconductor Schottky-Barrier Contact.
- Authors
Bozhkov, V.; Zaitsev, S.
- Abstract
The model of an ideal (without an intermediate layer and electron surface states) metal-semiconductor Schottky-barrier contact is numerically analyzed with allowance for the effect of image-force barrier-height lowering. It is shown that the nonlinear dependence of barrier height on the bias voltage inherent in this contact causes not only the deviation of the current-voltage (I-V) characteristic from an ideal one but also the so-called “low-temperature anomaly” — an increase in the I-V-characteristic ideality factor n and a decrease in the barrier height ϕbm measured from the saturation current as the temperature is decreased. A more exact equation for the I-V characteristic of the ideal contact is theoretically substantiated using parameters n and ϕbm in a wide temperature range.
- Subjects
SEMICONDUCTOR-metal boundaries; ELECTRIC contacts; SCHOTTKY barrier diodes; TEMPERATURE; SEMICONDUCTORS
- Publication
Russian Physics Journal, 2005, Vol 48, Issue 3, p312
- ISSN
1064-8887
- Publication type
Article
- DOI
10.1007/s11182-005-0125-y