We found a match
Your institution may have rights to this item. Sign in to continue.
- Title
Fast and scalable phase change materials Ti–Sb–Te deposited by plasma-enhanced atomic layer deposition.
- Authors
Wang, Hao; Song, Sannian; Song, Zhitang; Zhou, Zhiguo; Yao, Dongning; Lv, Shilong
- Abstract
Current features of phase change memory (PCM) based on Ge2Sb2Te5 (GST) as a non-volatile memory is insufficient to meet the needs of storage class memory (SCM) such as extremely high-density, ultra-fast operating speed and long life cycle. In this study, Ti0.28Sb2Te3 (TST) device was fabricated based on atomic layer deposition (ALD) method and used as a phase change material. Due to the fast crystallization and low melting temperature of TST, the set speed can be reduced to 6 ns while the reset voltage can be decreased by 20% compared with GST-based device with the same cell structure. In addition, the ALD-deposited TST alloy showed a good gap-fill capability. These results indicate that the ALD-deposited TST film is a fast and scalable phase-change material applied to SCM.
- Subjects
ATOMIC layer deposition; PHASE change memory; PHASE change materials; LONGEVITY; CELL anatomy; MELT crystallization
- Publication
Journal of Materials Science: Materials in Electronics, 2020, Vol 31, Issue 8, p5833
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-019-02605-1