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- Title
Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures.
- Authors
Arapov, Yu.; Gudina, S.; Klepikova, A.; Neverov, V.; Novokshonov, S.; Kharus, G.; Shelushinina, N.; Yakunin, M.
- Abstract
The longitudinal ρ( B) and Hall ρ( B) magnetoresistances are investigated experimentally in the integer quantum Hall effect (QHE) regime in n-InGaAs/GaAs double quantum well nanostructures in the range of magnetic fields B = (0-16) T and temperatures T = (0.05-70) K before and after IR illumination. The results are evaluated within the scaling hypothesis with regard to electron-electron interaction.
- Subjects
QUANTUM Hall effect; NANOSTRUCTURED materials; SCALING laws (Nuclear physics); INDIUM gallium arsenide; GALLIUM arsenide; TEMPERATURE effect; QUANTUM theory
- Publication
Journal of Experimental & Theoretical Physics, 2013, Vol 117, Issue 1, p144
- ISSN
1063-7761
- Publication type
Article
- DOI
10.1134/S1063776113080116