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- Title
Optical Properties of Multi-Stacked InAs Quantum Dots Embedded in GaAs/InGaAs Strained Layer and its Annealing Behaviors.
- Authors
Kim, D. Y.; Kim, G. S.; Jeon, S. M.; Cho, M. Y.; Choi, H. Y.; Kim, M. S.; Lee, D.-Y.; Kim, J. S.; Eom, G.-S.; Leem, J.-Y.
- Abstract
Multi-stacked InAs QDs embedded in ten periods of GaAs/In0:1Ga0:9As strained layers were grown by MBE and their optical properties were investigated by using PL spectroscopy. For the QDs embedded in ten periods of GaAs/In0:1Ga0:9As strained layers, the PL intensity is enhanced about 4.7 times and a narrower FWHM of 26 meV is observed compared to those of the conventional multi-stacked QDs. The PL spectra of the InAs QDs show blue-shifts of about 50 meV with increasing annealing temperature up to 850 °C. At annealing temperature of 600 °C, the FWHM of the PL peak is reduced to 16 meV and PL intensity is enhanced compared to those of the as-grown sample, which indicates improvement of size uniformity and crystal quality of the QDs.
- Subjects
QUANTUM dots; ANNEALING of metals; SPECTRUM analysis; QUANTUM electronics; SEMICONDUCTORS; CRYSTALS
- Publication
Acta Physica Polonica: A, 2010, Vol 117, Issue 6, p941
- ISSN
0587-4246
- Publication type
Article
- DOI
10.12693/APhysPolA.117.941