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- Title
Electrochemical Deposition of Transparent p-Type Semiconductor NiO.
- Authors
TONG, B. A. Y. I. N. G. A. E. R. D. I.; ICHIMURA, M. A. S. A. Y. A.
- Abstract
SUMMARY NiO is a p-type semiconductor having a large band gap (>3 eV). In this study, thin films containing Ni-O were deposited by the cathodic electrochemical deposition method, and characteristics change by heat treatment was investigated. An aqueous solution containing Ni(NO3)2 was used as a deposition solution. X-ray photoelectron spectroscopy showed that the sample before annealing was predominantly Ni(OH)2. After heat treatment in air at temperatures higher than 300 °C, the NiO phase was observed by X-ray diffraction, and the p-type response was confirmed by the photoelectrochemical measurement. The band gap obtained from the light transmittance measurement was around 3.5 eV.
- Subjects
P-type semiconductors; ELECTROCHEMISTRY; NICKEL oxide; X-ray photoelectron spectroscopy; ANNEALING of metals
- Publication
Electronics & Communications in Japan, 2018, Vol 101, Issue 2, p45
- ISSN
1942-9533
- Publication type
Article
- DOI
10.1002/ecj.12043