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- Title
Flexible Metal Oxide Semiconductor Devices Made by Solution Methods.
- Authors
Jo, Jeong‐Wan; Kang, Seung‐Han; Heo, Jae Sang; Kim, Yong‐Hoon; Park, Sung Kyu
- Abstract
For the fabrication of next‐generation flexible metal oxide devices, solution‐based methods are considered as a promising approach because of their potential advantages, such as high‐throughput, large‐area scalability, low‐cost processing, and easy control over the chemical composition. However, to obtain certain levels of electrical performance, a high process temperature is essential, which can significantly limit its application in flexible electronics. Therefore, this article discusses recent research conducted on developing low‐temperature, solution‐processed, flexible, metal oxide semiconductor devices, from a single thin‐film transistor device to fully integrated circuits and systems. The main challenges of solution‐processed metal oxide semiconductors are introduced. Recent advances in materials, processes, and semiconductor structures are then presented, followed by recent advances in electronic circuits and systems based on these semiconductors, including emerging flexible energy‐harvesting devices for self‐powered systems that integrate displays, sensors, data‐storage units, and information processing functions.
- Subjects
METAL oxide semiconductors; SEMICONDUCTOR devices; ELECTRONIC circuits; FLEXIBLE electronics; THIN film transistors; ELECTRONIC systems
- Publication
Chemistry - A European Journal, 2020, Vol 26, Issue 42, p9126
- ISSN
0947-6539
- Publication type
Article
- DOI
10.1002/chem.202000090