Found: 40
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Masthead.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.202070018
- Publication type:
- Article
The Study of Latex Sphere Lithography for High Aspect Ratio Dry Silicon Etching.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.202070017
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- Publication type:
- Article
Spectral Dependencies of the Stretched Exponential Dispersion Factor and Photoluminescence Quantum Yield as a Common Feature of Nanocrystalline Si.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900698
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- Article
Optical Diagnostics of Free Charge Carriers in Silicon Nanowire Arrays.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900670
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- Publication type:
- Article
Donor Centers Involved into the Quantum Cutting in Ytterbium‐Doped Scheelite‐Like Crystals.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900659
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- Article
Numerical Simulations for In‐Depth Analysis of Transmission Line Method Measurements for Photovoltaic Applications—The Influence of the p–n Junction.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900600
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- Publication type:
- Article
Photoluminescence Intensity Enhancement of Single Silicon Quantum Dots on a Metal Membrane with a Spacer.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900575
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- Article
A Unique System for Registering One‐Photon Signals in the Ultraviolet Range from An Isomeric <sup>229m</sup>Th Nucleus Implanted on Thin SiO<sub>2</sub>/Si Films.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900551
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- Publication type:
- Article
The Study of Latex Sphere Lithography for High Aspect Ratio Dry Silicon Etching.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900535
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- Publication type:
- Article
Effect of Cryogenic Dry Etching on Minority Charge Carrier Lifetime in Silicon.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900534
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- Publication type:
- Article
Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900532
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- Publication type:
- Article
Improved Surface Passivation by Wet Texturing, Ozone‐Based Cleaning, and Plasma‐Enhanced Chemical Vapor Deposition Processes for High‐Efficiency Silicon Heterojunction Solar Cells.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900518
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- Publication type:
- Article
Crystallization Behavior of Amorphous Si Nanoinclusions Embedded in Silicon Oxide Matrix.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. 1, doi. 10.1002/pssa.201900513
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- Publication type:
- Article
Electrical Properties of Sn‐Doped α‐Ga<sub>2</sub>O<sub>3</sub> Films on m‐Plane Sapphire Substrates Grown by Mist Chemical Vapor Deposition.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900632
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- Publication type:
- Article
Masthead.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.202070015
- Publication type:
- Article
Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900675
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- Publication type:
- Article
Compound Semiconductors.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.202000022
- Publication type:
- Article
Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900675
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- Publication type:
- Article
Revelation of Dislocations in β‐Ga<sub>2</sub>O<sub>3</sub> Substrates Grown by Edge‐Defined Film‐Fed Growth.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900630
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- Publication type:
- Article
Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900629
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- Publication type:
- Article
The Effect of Introducing Optical Blanking on GaN Epitaxy Using Pulsed Laser Deposition Technology.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900517
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- Publication type:
- Article
Revelation of Dislocations in β‐Ga<sub>2</sub>O<sub>3</sub> Substrates Grown by Edge‐Defined Film‐Fed Growth.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900630
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- Publication type:
- Article
Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900628
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- Publication type:
- Article
Organic Sensor Array Distributed in Flexible and Curved Surfaces.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900626
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- Publication type:
- Article
Direct Heteroepitaxy of Orientation‐Patterned GaP on GaAs by Hydride Vapor Phase Epitaxy for Quasi‐Phase‐Matching Applications.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900627
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- Publication type:
- Article
Intersystem Crossing Rate in Thermally Activated Delayed Fluorescence Emitters.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900616
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- Publication type:
- Article
Growth of InGaAs Solar Cells on InP(001) Miscut Substrates Using Solid‐Source Molecular Beam Epitaxy.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900512
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- Publication type:
- Article
Indium Phosphide Membrane Nanophotonic Integrated Circuits on Silicon.
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- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900606
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- Publication type:
- Article
Metalorganic Chemical Vapor Deposition of over 150‐nm‐Thick Quaternary AlGaInN Epitaxial Films near Alloy Composition Lattice‐Matching to GaN on Sapphire and Their Structural and Optical Characterization.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900597
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- Publication type:
- Article
GaN‐Based Monolithic Inverter Consisting of Enhancement‐ and Depletion‐Mode MOSFETs by Si Ion Implantation.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900550
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- Publication type:
- Article
Top‐Gated Polymer Light‐Emitting Transistors Based on the Device Fabrication without Intermixing of Poly(methyl methacrylate) Gate Dielectric Formed from Fluorine‐Based Orthogonal Solvent.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900531
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- Publication type:
- Article
Buried‐Tunnel Junction Current Injection for InP‐Based Nanomembrane Photonic Crystal Surface Emitting Lasers on Silicon.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900527
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- Publication type:
- Article
Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO<sub>2</sub>/Si Substrate.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900523
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- Publication type:
- Article
Regional Bandgap Tailoring of 1550 nm‐Band InAs Quantum Dot Intermixing by Controlling Ion Implantation Depth.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900521
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- Publication type:
- Article
Evolution and Recovery of Electrical Property of Reactive Sputtered Al‐Doped ZnO Transparent Electrode Exposed to Harsh Environment.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900519
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- Publication type:
- Article
Improved Electron Transport Properties of Ga<sub>1–x</sub>In<sub>x</sub>Sb Quantum Well Channel Using Strained‐Al<sub>0.40</sub>In<sub>0.60</sub>Sb/Al<sub>1–y</sub>In<sub>y</sub>Sb Stepped Buffer.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900516
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- Publication type:
- Article
Effects of Bi Irradiation on the Molecular Beam Epitaxy Growth of GaSb on Ge (111) Vicinal Substrates.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900425
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- Publication type:
- Article
Highdetectivity AlInSb Midinfrared Photodiode Sensors with Dislocation Filter Layers for Gas Sensing.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900515
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- Publication type:
- Article
Fabrication of CH<sub>3</sub>NH<sub>3</sub>PbBr<sub>3</sub>‐Based Perovskite Single‐Crystal Arrays by Spin‐Coating Method Using Hydrophobic Patterned Substrate.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900511
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- Publication type:
- Article
Vertical β‐Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900497
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- Publication type:
- Article