Back to matchesWe found a matchYour institution may have rights to this item. Sign in to continue.TitleEffect of boron on formation of interstitial-related luminescence centres in ion implanted silicon.AuthorsMcCallum, J. C.; Villis, B. J.; Johnson, B. C.; Stavrias, N.; Burgess, J. E.; Charnvanichborikarn, S.; Wong-Leung, J.; Williams, J. S.; Jagadish, C.PublicationPhysica Status Solidi. A: Applications & Materials Science, 2011, Vol 208, Issue 3, p620ISSN1862-6300Publication typeArticleDOI10.1002/pssa.201000380