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- Title
High voltage GaN p-n diodes formed by selective area regrowth.
- Authors
Armstrong, A. M.; Pickrell, G. P.; Allerman, A. A.; Crawford, M. H.; Glaser, C. E.; Smith, T.; Abate, V. M.
- Abstract
GaN p-n diodes were formed by selective area regrowth on freestanding GaN substrates using a dry etch, followed by post-etch surface treatment to reduce etch-induced defects, and subsequent regrowth into wells. Etched-and-regrown diodes with a 150 µm diameter achieved 840 V operation at 0.5 A/cm² reverse current leakage and a specific on-resistance of 1.2 mΩ·cm². Etched-andregrown diodes were compared with planar, regrown diodes without etching on the same wafer. Both types of diodes exhibited similar forward and reverse electrical characteristics, which indicate that etch-induced defectivity of the junction was sufficiently mitigated so as not to be the primary cause for leakage. An area dependence for forward and reverse leakage current density was observed, suggesting that the mesa sidewall provided a leakage path.
- Subjects
DIODES; PLASMA etching; SURFACE preparation; HIGH voltages
- Publication
Electronics Letters (Wiley-Blackwell), 2020, Vol 56, Issue 4, p207
- ISSN
0013-5194
- Publication type
Article
- DOI
10.1049/el.2019.3587