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- Title
A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array Operation.
- Authors
Upadhyay, Navnidhi K.; Sun, Wen; Lin, Peng; Joshi, Saumil; Midya, Rivu; Zhang, Xumeng; Wang, Zhongrui; Jiang, Hao; Yoon, Jung Ho; Rao, Mingyi; Chi, Miaofang; Xia, Qiangfei; Yang, J. Joshua
- Abstract
Memristor devices could realize their full scaling (2D) and stacking (3D) potential if vertically integrated with a two‐terminal selector in a one selector one memristor (1S1R) crossbar array. However, for a 1S1R‐integrated device to function properly, memristor and selector should be compatible in terms of their material composition and electrical properties. A platinum (Pt)/yttria‐stabilized zirconia (YSZ)/zirconium (Zr) memristor with low forming voltage (<1.5 V), low first reset current (150 µA), fast switching speed (2 ns), low voltage (<1 V) and current (50 µA) resistive switching operation, and multi‐conductance state capabilities is reported. A low activation energy of oxygen vacancy diffusion (Ea,diffusion = 0.7 eV) measured in the YSZ switching layer enables the proposed memristor to have the observed low‐energy operation, which renders it better compatible with a selector device than the more commonly used binary oxides. For a proof‐of‐principle demonstration, the device is vertically integrated with a tunneling selector and successfully performs memristor‐electroforming operations with the selector in a self‐compliant 1S1R integrated device. 1S1R cells into a small array (2 × 2) are further investigated and electroforming and resistive switching operations at the array level are demonstrated.
- Subjects
MEMRISTORS; TISSUE arrays; ACTIVATION energy; ELECTRIC potential; LOW voltage systems; DIFFUSION
- Publication
Advanced Electronic Materials, 2020, Vol 6, Issue 5, p1
- ISSN
2199-160X
- Publication type
Article
- DOI
10.1002/aelm.201901411