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- Title
Fabrication of All-tube p- and n-Type Carbon Nanotube Field-Effect Transistors by the Laser Transfer Method.
- Authors
CHANG-JIAN, S.-K.; HO, J.-R.; CHENG, J.-W. J.
- Abstract
We report a method for fabricating all-carbon nanotubes p- and n-type field-effect transistors upon a Si substrate using a laser transfer technique that first transfers multi-walled carbon nanotube (MWNTs) film upon the Si substrate as electrodes. The single-walled carbon nanotubes (SWNTs) and polyethylene imine (PEI) mixed with SWNTs are then transferred between the MWNT electrodes as the semi-conducting layers for the designated p- and n-type field-effect transistors. This laser transfer technique is relatively simple and low-cost, and has the advantage of fabricating carbon nanotube field-effect transistors efficiently in a fixed location in the ambient environment.
- Subjects
MICROFABRICATION; CARBON nanotubes; FIELD-effect transistors; SILICON; IMINES; TUBES; SEMICONDUCTORS; THIN films; LASER beams
- Publication
Lasers in Engineering (Old City Publishing), 2011, Vol 21, Issue 5/6, p281
- ISSN
0898-1507
- Publication type
Article