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- Title
Gate Work Function-Engineered Graded-Channel Macaroni MOSFET: Exploration of Temperature and Localized Trapped Charge-Induced Effects with GIDL Analysis.
- Authors
Banerjee, Pritha; Das, Jayoti
- Abstract
The current research paper presents the analytical modelling and simulation-based device characteristics of a dual-material (DM) gate-graded Channel (GC) macaroni metal-oxide-semiconductor field-effect transistor (MOSFET) in the presence/absence of localized interface trapped charges within a temperature range of 100–500 K. The device's inner potential and threshold voltage dependence on the inherent macaroni features, such as filler radius and outer radius, of the proposed macaroni MOSFET are exhibited through the current research. Detailed investigation exhibits that the dual-material gate allows suitable suppression of various short-channel effects such as drain-induced barrier lowering (DIBL), hot-carrier effect (HCE) and gate-induced drain leakage (GIDL) current. Graded channel technology has been incorporated to obtain suitable tuning of threshold voltage. Device features such as inner potential, threshold voltage and drain current (including GIDL) for a damaged (presence of localized trapped charges) and undamaged device have been presented to demonstrate the impact of localized trapped charges on device features. Comprehensive temperature-based research exploration exhibits significant thermal influence on the device performance and an estimation of device performance reliability over the 100–500 K temperature range has been provided in the investigation. Comparative research analysis of inner potential, threshold voltage, DIBL and subthreshold swing (SS) of the device with its graded-channel dual-material gate-all-around cylindrical counterpart clearly highlights the advantages offered by the proposed device over other contemporary devices. Analytical results have been verified from simulation outputs using Silvaco TCAD.
- Subjects
METAL oxide semiconductor field-effect transistors; FIELD-effect transistors; THRESHOLD voltage; TEMPERATURE
- Publication
Journal of Electronic Materials, 2022, Vol 51, Issue 4, p1512
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-021-09419-0