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- Title
Thermal Stability and Electrical Transport Properties of Single-Crystalline β-ZnSb Co-doped by Ga/Sn.
- Authors
Deng, Shuping; Tang, Yu; Li, Decong; Liu, Hongxia; Chen, Zhong; Shen, Lanxian; Deng, Shukang
- Abstract
In this study, Ga/Sn co-doped single-crystal β-ZnSb were prepared by a Sn-flux method based on stoichiometric ratios of ZnSbGaSn ( x = 0, 0.25, 0.5, 0.6 and 0.75). The effect of Ga/Sn co-doping on the thermal stability and electrical transport properties of the obtained samples were investigated. All the prepared samples exhibit p-type conduction, and carrier concentration varies from 4.71 × 10 cm to 10.44 × 10 cm, while carrier mobility changes from 34.2 cm V s to 68.9 cm V s at room temperature. Structure analysis indicates that all samples are β-ZnSb with space group $$ R\bar{3}c$$ . Thermal analysis results show that the Ga/Sn co-doped samples possess an excellent thermal stability. The results of crystal compositions indicate that both Ga and Sn atoms tend to replace Zn atoms, and the electrical transport properties of the samples were optimized by co-doping Ga and Sn. Meanwhile, the calculated values of the carrier effective mass, band gap and relaxation time agree with the result obtained from a band structure calculation. Consequently, the sample with Ga initial content x = 0.5 possesses excellent electrical properties, which obtains a maximal power factor of 1.56 × 10 W m K at 450 K.
- Subjects
ZINC antimonides; THERMAL stability; GALLIUM-tin alloys; COBALT compounds; ELECTRON transport; SINGLE crystals; SEMICONDUCTOR doping profiles; ELECTRONIC band structure
- Publication
Journal of Electronic Materials, 2017, Vol 46, Issue 12, p6804
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-017-5747-7