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- Title
Study of the Factors Limiting the Efficiency of Vertical-Type Nitride- and AlInGaP-Based Quantum-Well Micro-LEDs.
- Authors
Ho, Cheng-Han; Chen, Shih-Min; Wu, Yuh-Renn
- Abstract
The efficiency of micro-light-emitting diodes (μ -LEDs) depends enormously on the chip size, and this is connected to sidewall-trap-assisted nonradiative recombination. It is known that the internal quantum efficiency (IQE) of aluminum gallium indium phosphide (AlGaInP)-based red μ -LEDs is much lower than that of nitride-based μ -LEDs. To establish the major reasons giving rise to this huge IQE discrepancy, we examined the limiting factors in the two structures. For the nitride-based InGaN quantum wells, the influences of random alloy fluctuations were examined. A two-dimensional Poisson and drift-diffusion solver was applied to analyze these issues.
- Subjects
GALLIUM phosphide; QUANTUM efficiency; INDIUM phosphide; FACTOR structure; QUANTUM wells; FLIP chip technology; ALLOYS; INDIUM gallium nitride
- Publication
Processes, 2022, Vol 10, Issue 3, p489
- ISSN
2227-9717
- Publication type
Article
- DOI
10.3390/pr10030489