Found: 31
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Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters.
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- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-53857-3
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- Article
Terrace Engineering of the Buffer Layer: Laying the Foundation of Thick GaN Drift Layer on Si Substrates.
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- Advanced Electronic Materials, 2023, v. 9, n. 7, p. 1, doi. 10.1002/aelm.202300148
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- Article
Single-photon emission from isolated monolayer islands of InGaN.
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- Light: Science & Applications, 2020, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41377-020-00393-6
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- Article
Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy.
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- Scientific Reports, 2017, p. 46420, doi. 10.1038/srep46420
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- Article
Magneto-transport Spectroscopy of the First and Second Two-dimensional Subbands in Al<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN Quantum Point Contacts.
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- Scientific Reports, 2017, p. 42974, doi. 10.1038/srep42974
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- Article
Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier.
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- Scientific Reports, 2016, p. 37415, doi. 10.1038/srep37415
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- Article
Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system.
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- Scientific Reports, 2016, p. 25124, doi. 10.1038/srep25124
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- Article
Photoluminescence of colloidal CdSe nano-tetrapods and quantum dots in oxygenic and oxygen-free environments.
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- Applied Physics A: Materials Science & Processing, 2011, v. 103, n. 2, p. 279, doi. 10.1007/s00339-010-6043-z
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- Article
High‐Efficiency InGaN Red Mini‐LEDs on Sapphire Toward Full‐Color Nitride Displays: Effect of Strain Modulation.
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- Advanced Functional Materials, 2023, v. 33, n. 26, p. 1, doi. 10.1002/adfm.202300042
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- Article
Room Temperature Triggered Single Photon Emission from Self‐Assembled GaN/AlN Quantum Dot in Nanowire.
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- Advanced Functional Materials, 2022, v. 32, n. 47, p. 1, doi. 10.1002/adfm.202208340
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- Article
Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates (Adv. Funct. Mater. 14/2022).
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- Advanced Functional Materials, 2022, v. 32, n. 14, p. 1, doi. 10.1002/adfm.202113211
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- Article
Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates.
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- Advanced Functional Materials, 2022, v. 32, n. 14, p. 1, doi. 10.1002/adfm.202113211
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- Article
Electrical Spin Injection into the 2D Electron Gas in AlN/GaN Heterostructures with Ultrathin AlN Tunnel Barrier.
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- Advanced Functional Materials, 2021, v. 31, n. 15, p. 1, doi. 10.1002/adfm.202009771
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- Article
Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures.
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- Advanced Functional Materials, 2020, v. 30, n. 46, p. 1, doi. 10.1002/adfm.202004450
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- Article
GaN‐on‐Si(100): Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene (Adv. Funct. Mater. 42/2019).
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- Advanced Functional Materials, 2019, v. 29, n. 42, p. N.PAG, doi. 10.1002/adfm.201970293
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- Article
Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene.
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- Advanced Functional Materials, 2019, v. 29, n. 42, p. N.PAG, doi. 10.1002/adfm.201905056
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- Article
Wavelength‐Controlled Photoconductance Polarity Switching via Harnessing Defects in Doped PdSe<sub>2</sub> for Artificial Synaptic Features.
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- Small, 2024, v. 20, n. 13, p. 1, doi. 10.1002/smll.202306068
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- Article
Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN.
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- Advanced Science, 2022, v. 9, n. 22, p. 1, doi. 10.1002/advs.202106028
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- Article
Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN.
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- Advanced Science, 2022, v. 9, p. 1, doi. 10.1002/advs.202106028
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- Article
Effective Manipulation of Spin Dynamics by Polarization Electric Field in InGaN/GaN Quantum Wells at Room Temperature.
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- Advanced Science, 2020, v. 7, n. 13, p. 1, doi. 10.1002/advs.201903400
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- Article
Lattice‐Asymmetry‐Driven Selective Area Sublimation: A Promising Strategy for III‐Nitride Nanostructure Tailoring.
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- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 7, p. 1, doi. 10.1002/pssr.202200399
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- Article
Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs.
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- Applied Sciences (2076-3417), 2019, v. 9, n. 11, p. 2373, doi. 10.3390/app9112373
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- Article
High‐Efficiency E‐Beam Pumped Deep‐Ultraviolet Surface Emitter Based on AlGaN Ultra‐Thin Staggered Quantum Wells.
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- Advanced Optical Materials, 2022, v. 10, n. 18, p. 1, doi. 10.1002/adom.202200011
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- Article
Free and bound excitonic effects in Al<sub>0.5</sub>Ga<sub>0.5</sub>N/Al<sub>0.35</sub>Ga<sub>0.65</sub>N MQWs with different Si-doping levels in the well layers.
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- Scientific Reports, 2015, p. 13046, doi. 10.1038/srep13046
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- Article
Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In<sub>0.17</sub>Al<sub>0.83</sub>N/GaN heterostructures.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep06521
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- Article
Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi<sub>2</sub>Se<sub>3</sub> Gated by Ionic Liquid.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep04889
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Spin transport study in a Rashba spin-orbit coupling system.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep04030
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- Article
Photo-induced macro/mesoscopic scale ion displacement in mixed-halide perovskites: ring structures and ionic plasma oscillations.
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- Light: Science & Applications, 2022, v. 11, n. 1, p. 1, doi. 10.1038/s41377-022-00957-8
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- Article
Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping.
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- Light: Science & Applications, 2022, v. 11, n. 1, p. 1, doi. 10.1038/s41377-022-00753-4
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- Article
Atomic-scale visualization of defect-induced localized vibrations in GaN.
- Published in:
- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-53394-z
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- Article
Repeatable Room Temperature Negative Differential Resistance in AlN/GaN Resonant Tunneling Diodes Grown on Sapphire.
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- Advanced Electronic Materials, 2019, v. 5, n. 2, p. N.PAG, doi. 10.1002/aelm.201800651
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- Article