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Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In Situ 3D Computed Tomography Visualization.
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- Advanced Engineering Materials, 2020, v. 22, n. 9, p. 1, doi. 10.1002/adem.201900778
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Comparison of Achievable Contrast Features in Computed Tomography Observing the Growth of a 4H-SiC Bulk Crystal.
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- Materials (1996-1944), 2019, v. 12, n. 22, p. 3652, doi. 10.3390/ma12223652
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Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules.
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- Materials (1996-1944), 2019, v. 12, n. 19, p. 3272, doi. 10.3390/ma12193272
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Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals.
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- Materials (1996-1944), 2019, v. 12, n. 16, p. 2591, doi. 10.3390/ma12162591
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Impact of Varying Parameters on the Temperature Gradients in 100 mm Silicon Carbide Bulk Growth in a Computer Simulation Validated by Experimental Results.
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- Crystal Research & Technology, 2020, v. 55, n. 2, p. N.PAG, doi. 10.1002/crat.201900121
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- Article