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- Title
Fabrication and study of <i>p-n</i> structures with crystalline inclusions in the space-charge region.
- Authors
Kalinovsky, V. S.; Levin, R. V.; Pushniy, B. V.; Mizerov, M. N.; Rumyantsev, V. D.; Andreev, V. M.
- Abstract
A new model of connecting elements for monolithic multijunction solar cells based on III–V compounds is proposed, in which p-n junctions with crystalline inclusions of a foreign semiconductor material in the space-charge region are used instead of p++- n++ tunnel junctions. The study shows that the introduction of crystalline inclusions to the space-charge region of the p-n junction in a GaSb-based structure allows current densities of ∼50 A/cm 2 at an ohmic loss of ∼0.01 Ω cm 2. The obtained characteristics of the connecting elements with crystalline inclusions show their applicability to multijunction solar cells for concentrated light conversion.
- Subjects
FABRICATION (Manufacturing); CRYSTAL inclusions; SPACE charge; SOLAR cells; SEMICONDUCTORS; P-N junctions (Semiconductors); TUNNEL junctions (Materials science)
- Publication
Semiconductors, 2013, Vol 47, Issue 12, p1652
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782613120105