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- Title
An efficient electron-beam-pumped semiconductor laser for the green spectral range based on II–VI multilayer nanostructures.
- Authors
Zverev, M. M.; Gamov, N. A.; Peregoudov, D. V.; Studionov, V. B.; Zdanova, E. V.; Sedova, I. V.; Gronin, S. V.; Sorokin, S. V.; Ivanov, S. V.; Kop'ev, P. S.
- Abstract
Emission characteristics of an electron-beam-pumped Cd(Zn)Se/ZnMgSSe semiconductor laser are studied. The laser’s active region consists of a set of ten equidistant ZnSe quantum wells containing fractional-monolayer CdSe quantum-dot inserts and a waveguide formed by a short-period superlattice with the net thickness of ∼0.65 μm. Lasing occurs at room temperature at a wavelength of 542 nm. Pulsed power as high as 12 W per cavity face and an unprecedentedly high efficiency of ∼8.5% are attained for the electron-beam energy of 23 keV.
- Subjects
SEMICONDUCTORS; NANOSTRUCTURES; LASERS; ELECTRON beams; QUANTUM wells; QUANTUM dots
- Publication
Semiconductors, 2008, Vol 42, Issue 12, p1440
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782608120129