Found: 32
Select item for more details and to access through your institution.
Glutathione Synthesis in Cancer Cells.
- Published in:
- Biochemistry (00062979), 2020, v. 85, n. 8, p. 895, doi. 10.1134/S0006297920080052
- By:
- Publication type:
- Article
Role of MicroRNAs in the Regulation of Redox-Dependent Processes.
- Published in:
- Biochemistry (00062979), 2019, v. 84, n. 11, p. 1233, doi. 10.1134/S0006297919110026
- By:
- Publication type:
- Article
Suppression of the Antioxidant System and PI3K/Akt/mTOR Signaling Pathway in Cisplatin-Resistant Cancer Cells by Quercetin.
- Published in:
- Bulletin of Experimental Biology & Medicine, 2022, v. 173, n. 6, p. 760, doi. 10.1007/s10517-022-05626-9
- By:
- Publication type:
- Article
Suppression of PI3K/Akt/mTOR Signaling Pathway and Antioxidant System and Reversal of Cancer Cells Resistance to Cisplatin under the Effect of Curcumin.
- Published in:
- Bulletin of Experimental Biology & Medicine, 2022, v. 173, n. 3, p. 371, doi. 10.1007/s10517-022-05551-x
- By:
- Publication type:
- Article
Redox-Dependent Expression of Genes Encoding NADPH Oxidase 5 and the Key Antioxidant Enzymes during Formation of Drug Resistance of Tumor Cells to Cisplatin.
- Published in:
- Bulletin of Experimental Biology & Medicine, 2018, v. 165, n. 5, p. 678, doi. 10.1007/s10517-018-4240-5
- By:
- Publication type:
- Article
Charge transfer in the presence of a layer of trapping centers in semiconductor SiC ionizing radiation detectors.
- Published in:
- Technical Physics Letters, 2008, v. 34, n. 12, p. 1069, doi. 10.1134/S1063785008120249
- By:
- Publication type:
- Article
Performance of p- n 4H-SiC film nuclear radiation detectors for operation at elevated temperatures (375 °C).
- Published in:
- Technical Physics Letters, 2008, v. 34, n. 3, p. 210, doi. 10.1134/S1063785008030103
- By:
- Publication type:
- Article
High-Resolution Short Range Ion Detectors Based on 4H-SiC Films.
- Published in:
- Technical Physics Letters, 2004, v. 30, n. 7, p. 575, doi. 10.1134/1.1783406
- By:
- Publication type:
- Article
Temperature Dependence of the Quantum Efficiency of 4H-SiC-Based Schottky Photodiodes.
- Published in:
- Technical Physics Letters, 2001, v. 27, n. 9, p. 776, doi. 10.1134/1.1407356
- By:
- Publication type:
- Article
Gettering Effect in Cr/4H–SiC UV Photodetectors under Ptoton Irradiation with E = 15 MeV.
- Published in:
- Technical Physics, 2023, v. 68, n. 12, p. 683, doi. 10.1134/S1063784223080224
- By:
- Publication type:
- Article
Azimuthal Elastic Anisotropy of the Upper Mantle under the Central Part of the Voronezh Uplift.
- Published in:
- Doklady Earth Sciences, 2020, v. 494, n. 2, p. 787, doi. 10.1134/S1028334X20100037
- By:
- Publication type:
- Article
Biomedical Aspects of Metabolic Portraiture.
- Published in:
- Doklady Biochemistry & Biophysics, 2001, v. 377, n. 1-6, p. 72, doi. 10.1023/A:1011567304333
- By:
- Publication type:
- Article
Changes in expression of genes encoding antioxidant enzymes, heme oxygenase-1, Bcl-2, and Bcl-xl and in level of reactive oxygen species in tumor cells resistant to doxorubicin.
- Published in:
- Biochemistry (00062979), 2006, v. 71, n. 11, p. 1200, doi. 10.1134/S0006297906110058
- By:
- Publication type:
- Article
4H-SiC-based photodetector of Carcinogenic UV radiation.
- Published in:
- Technical Physics, 2008, v. 53, n. 1, p. 81, doi. 10.1134/S1063784208010155
- By:
- Publication type:
- Article
Irradiation with Argon Ions of Cr/4H-SiC Photodetectors.
- Published in:
- Semiconductors, 2022, v. 56, n. 3, p. 184, doi. 10.1134/S1063782622020087
- By:
- Publication type:
- Article
Structural, Electrical, and Optical Properties of 4H–SiC for Ultraviolet Photodetectors.
- Published in:
- Semiconductors, 2020, v. 54, n. 12, p. 1628, doi. 10.1134/S1063782620120118
- By:
- Publication type:
- Article
Structural and Optical Characteristics of 4H-SiC UV Detectors Irradiated with Argon Ions.
- Published in:
- Semiconductors, 2020, v. 54, n. 11, p. 1478, doi. 10.1134/S1063782620110123
- By:
- Publication type:
- Article
Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors.
- Published in:
- Semiconductors, 2020, v. 54, n. 2, p. 246, doi. 10.1134/S1063782620020128
- By:
- Publication type:
- Article
Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers.
- Published in:
- Semiconductors, 2019, v. 53, n. 6, p. 844, doi. 10.1134/S1063782619060071
- By:
- Publication type:
- Article
A high-temperature radiation-resistant rectifier based on p<sup>+</sup>-n junctions in 4H-SiC ion-implanted with aluminum.
- Published in:
- Semiconductors, 2010, v. 44, n. 6, p. 778, doi. 10.1134/S1063782610060151
- By:
- Publication type:
- Article
Redistribution of Al in implanted SiC layers as a result of thermal annealing.
- Published in:
- Semiconductors, 2009, v. 43, n. 5, p. 557, doi. 10.1134/S1063782609050029
- By:
- Publication type:
- Article
Spectrometric properties of SiC detectors based on ion-implanted p <sup>+</sup>- n junctions.
- Published in:
- Semiconductors, 2006, v. 40, n. 9, p. 1096, doi. 10.1134/S1063782606090193
- By:
- Publication type:
- Article
Spectrometry of Short-Range Ions Using Detectors Based on 4H-SiC Films Grown by Chemical Vapor Deposition.
- Published in:
- Semiconductors, 2005, v. 39, n. 3, p. 364, doi. 10.1134/1.1882803
- By:
- Publication type:
- Article
Optical and Electrical Properties of 4H-SiC Irradiated with Fast Neutrons and High-Energy Heavy Ions.
- Published in:
- Semiconductors, 2004, v. 38, n. 10, p. 1187, doi. 10.1134/1.1808826
- By:
- Publication type:
- Article
Photoelectric Properties of p[sup +]–n Junctions Based on 4H-SiC Ion-Implanted with Aluminum.
- Published in:
- Semiconductors, 2002, v. 36, n. 6, p. 706, doi. 10.1134/1.1485675
- By:
- Publication type:
- Article
Silicon Carbide Detectors of High-Energy Particles.
- Published in:
- Semiconductors, 2002, v. 36, n. 6, p. 710, doi. 10.1134/1.1485676
- By:
- Publication type:
- Article
Mechanism of the Current Flow in Pd–(Heavily Doped p-Al[sub x]Ga[sub 1 – ][sub x]N) Ohmic Contact.
- Published in:
- Semiconductors, 2001, v. 35, n. 5, p. 529, doi. 10.1134/1.1371616
- By:
- Publication type:
- Article
Determination of Nitrogen in Silicon Carbide by Secondary Ion Mass Spectrometry.
- Published in:
- Journal of Analytical Chemistry, 2004, v. 59, n. 3, p. 250, doi. 10.1023/B:JANC.0000018968.09670.88
- By:
- Publication type:
- Article
An instrument for measuring the intensity and dose of cancerigenic ultraviolet radiation.
- Published in:
- Instruments & Experimental Techniques, 2010, v. 53, n. 5, p. 743, doi. 10.1134/S0020441210050234
- By:
- Publication type:
- Article
Seasonal Formation of Tree Rings in Siberian Larch and Scots Pine in the Southern Taiga of Central Siberia.
- Published in:
- Russian Journal of Ecology, 2019, v. 50, n. 3, p. 227, doi. 10.1134/S1067413619030068
- By:
- Publication type:
- Article
Radiation Resistance of Devices Based on SiC.
- Published in:
- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2018, v. 12, n. 2, p. 364, doi. 10.1134/S1027451018020283
- By:
- Publication type:
- Article
Long-Term Variability of Anatomic Features of Annual Tree Rings of Larch, Pine and Spruce in the Permafrost Zone in Central Siberia.
- Published in:
- Contemporary Problems of Ecology, 2019, v. 12, n. 7, p. 692, doi. 10.1134/S1995425519070035
- By:
- Publication type:
- Article