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- Title
Study of Heavily Doped n-3C-SiC Epitaxial Films Grown on 6H-SiC Semi-Insulating Substrates by Sublimation Method.
- Authors
Lebedev, A. A.; Davydov, V. Yu.; Eliseev, I. A.; Lebedev, S. P.; Nikitina, I. P.; Oganesyan, G. A.; Smirnov, A. N.; Shakhov, L. V.
- Abstract
Heavily doped 3C-SiC films based on semi-insulating 6H-SiC substrates were obtained by sublimation epitaxy. The structural perfection of the obtained samples was monitored by X-ray diffractometry. The measurements of the photoluminescence and Hall effect spectra have confirmed the rather high perfection of the obtained epitaxial layers.
- Subjects
HALL effect; EPITAXIAL layers; PHOTOLUMINESCENCE measurement; SUBLIMATION (Chemistry); EPITAXY; METAL-insulator transitions; X-rays
- Publication
Semiconductors, 2023, Vol 57, Issue 2, p121
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782623040103