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- Title
Formation of silicon nanoclusters in buried ultra-thin oxide layers.
- Authors
Oberemok, O. S.; Litovchenko, V. G.; Gamov, D. V.; Popov, V. G.; Melnik, V. P.; Gudymenko, O. Yo.; Nikirin, V. A.; Khatsevich, I. M.
- Abstract
The peculiarities of buried layer formation obtained by co-implantation of O2 ions with the energy of 130 keV and carbon ions within the energy range of 30-50 keV have been investigated. The corresponding ion doses for carbon and oxygen ions were equal to 2x1016 cm-2 and 1.8x1017 cm-2 respectively. It has been observed that annealing at 1150 °C results in enhanced oxygen diffusion towards the region with a maximum carbon concentration. Analysis of X-ray diffraction patterns with a SIMS depth profiles inherent to annealed samples suggests formation of Si nanoclusters in the region with maximum concentrations of carbon and oxygen vacancies. The intensive luminescence has been observed with the maximum at 600 nm, which could be associated with silicon nano-inclusions in thin stoichiometric SiO2 layer.
- Subjects
SILICON; OXIDE coating; ANNEALING of semiconductors; CARBON; OXYGEN; MICROCLUSTERS; ION implantation; CRYSTAL defects
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, Vol 14, Issue 3, p369
- ISSN
1560-8034
- Publication type
Article