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- Title
(111)‐Oriented Growth and Acceptor Doping of Transparent Conductive CuI:S Thin Films by Spin Coating and Radio Frequency‐Sputtering.
- Authors
Geng, Fangjuan; Wang, Liangjun; Stralka, Tillmann; Splith, Daniel; Ruan, Siyuan; Yang, Jialin; Yang, Lei; Gao, Gang; Xu, Liangge; Lorenz, Michael; Grundmann, Marius; Zhu, Jiaqi; Yang, Chang
- Abstract
Anion doping is an efficient method for modifying the electrical property of the p‐type semiconductor CuI. However, adjustment of the hole density is still challenging. Using sputtering and spin coating techniques, well‐controlled S‐doping of CuI thin films has been realized. The spin‐coated samples present a single (111) out‐of‐plane orientation and very high crystallinity, which is comparable with previously reported epitaxial CuI thin films. The sputtered thin films have advantages in surface morphology and conductivity. Substituting S for I can achieve efficient acceptor doping of CuI for both the physical and chemical growth methods. The highest conductivity of CuI appears at 2.0 at% of S doping, and the doping efficiency is influenced by the self‐compensation effect.
- Subjects
SPIN coating; THIN films; P-type semiconductors; SURFACE conductivity; SURFACE morphology
- Publication
Advanced Engineering Materials, 2023, Vol 25, Issue 11, p1
- ISSN
1438-1656
- Publication type
Article
- DOI
10.1002/adem.202201666