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- Title
Research on the structural and optical stability of Ga<sub>2</sub>O<sub>3</sub> films deposited by electron beam evaporation.
- Authors
Cheng, Yi; Yang, Kun; Peng, Yong; Yin, Yan; Chen, Jixiang; Jing, Bo; Liang, Hongwei; Du, Guotong
- Abstract
Ga 2O 3 films were deposited on c-plane sapphire substrates using electron beam evaporation method with subsequent annealing in oxygen ambient for different time interval. The effect of annealing treatment on the microstructures and optical characteristics of Ga 2O 3 films were systematically investigated by X-ray diffraction, atomic force microscope, photoluminescence (PL) spectra and optical transmittance spectra, respectively. The results indicated that Ga 2O 3 films showed a stronger preferred orientation after annealing for 30, 60 and 90 min at 1,000 °C. The diffraction peaks $$(\bar{6}01)$$ ( 6 ¯ 01 ) and (403) of the annealed Ga 2O 3 films increased first and then decreased. We discussed the influence of annealing time interval on the grain sizes and surface morphologies properties of Ga 2O 3 films. The PL spectra measured at room temperature revealed blue, green and red emissions. Intense green luminescence was obtained from the sample annealed for 60 and 90 min. The crystalline quality of Ga 2O 3 film was markedly improved after annealing, which caused the intensity of blue peak (~430 nm) and green peak (~513 nm) increasing noticeably. The origin of these emissions was discussed. All annealed Ga 2O 3 films exhibited a steep absorption edge in deep ultraviolet region, and presented over 70 % transmittance in the visual light region.
- Subjects
GALLIUM compounds; METALLIC thin films; ELECTRON beams; OPTICAL properties of metals; CHEMICAL stability; CRYSTAL structure research
- Publication
Journal of Materials Science: Materials in Electronics, 2013, Vol 24, Issue 12, p5122
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-013-1533-3